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Please use this identifier to cite or link to this item: http://hdl.handle.net/10087/2939

Title: Spectroscopic characterization of naturally and chemically oxidized silicon surfaces
Authors: Tsunoda, Kazuaki
Ohashi, Emiko
Adachi, Sadao
Issue Date: 1-Nov-2003
Publisher: American Institute of Physics
Citation: Journal of Applied Physics. 94, 5613-5616 (2003)
Abstract: We have determined the thicknesses of naturally and chemically grown oxides on HF-cleaned silicon surfaces in ambient air and in NH4OH/H2O2/H2O solution, respectively, using spectroscopic ellipsometry. The naturally grown oxide thickness versus air-exposure time plots yield a rate constant of 3.5+-0.5 Å/decade in ambient air. Chemical oxidation occurs immediately upon immersing the sample in the chemical solution and leaves the sample surface terminated with ~6 Å of a chemical oxide. Photoreflectance intensity is found to be strongly dependent on such surface processing, and results are explained by the different degree of surface (interface) states.
URI: http://hdl.handle.net/10087/2939
ISSN: 0021-8979
Appears in Collections:学術雑誌論文

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