Academic Knowledge Archives of Gunma Institutes >
群馬大学(Gunma University) >
50 工学研究科 >
5006 電気電子工学専攻 >
学術雑誌論文 >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10087/2943

Title: Properties of GaP(001) surfaces treated in aqueous HF solutions
Authors: Morota, Hiroaki
Adachi, Sadao
Issue Date: 1-Jun-2007
Publisher: American Institute of Physics
Citation: Journal of Applied Physics. 101, 113518 (2007)
Abstract: Chemically cleaned GaP(001) surfaces in aqueous HF solutions have been studied using spectroscopic ellipsometry (SE), ex situ atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), wettability, and photoluminescence (PL) measurements. The SE data clearly indicate that the solutions cause removal of the native oxide film immediately upon immersing the sample (?1 min). The SE data, however, suggest that the native oxide film cannot be completely etch-removed. This is due to the fact that as soon as the etched sample is exposed to air, the oxide starts to regrow. The SE estimated roughness is ~1 nm, while the AFM roughness value is ~0.3 nm. The XPS spectra confirm the removal of the native oxide and also the presence of regrown oxide on the HF-etched GaP surface. The wettability measurements indicate that the HF-cleaned surface is hydrophobic, which is in direct contrast to those obtained from alkaline-cleaned surfaces (hydrophilic). A slight increase in the PL intensity is also observed after etching in aqueous HF solutions.
URI: http://hdl.handle.net/10087/2943
ISSN: 0021-8979
Appears in Collections:学術雑誌論文

Files in This Item:

File Description SizeFormat
JApplPhys_101_113518.pdf189.44 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


DSpace Software Copyright © 2002-2010  Duraspace - Feedback