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Please use this identifier to cite or link to this item: http://hdl.handle.net/10087/2945

Title: Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
Authors: Tomioka, Katsuhiro
Adachi, Sadao
Issue Date: 19-Dec-2005
Publisher: American Institute of Physics
Citation: Applied Physics Letters. 87, 251920 (2005)
Abstract: A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region is presented. This method uses photoetching in an aqueous salt (KF) solution. Strong UV photoluminescence is observed at ~3.3 eV with a full width at a half maximum of ~0.1 eV, which is much narrower than those reported previously. Fourier transform infrared spectroscopy suggests that the surface oxide produced during photoetching plays an important role in the UV emission of the KF-prepared PSi.
URI: http://hdl.handle.net/10087/2945
ISSN: 0003-6951
Appears in Collections:学術雑誌論文

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