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Academic Knowledge Archives of Gunma Institutes >
群馬大学（Gunma University） >
50 工学研究科 >
5006 電気電子工学専攻 >
学術雑誌論文 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10087/2945
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| Title: | Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution |
| Authors: | Tomioka, Katsuhiro
Adachi, Sadao |
| Issue Date: | 19-Dec-2005 |
| Publisher: | American Institute of Physics |
| Citation: | Applied Physics Letters. 87, 251920 (2005) |
| Abstract: | A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region is
presented. This method uses photoetching in an aqueous salt (KF) solution. Strong UV
photoluminescence is observed at ～3.3 eV with a full width at a half maximum of ～0.1 eV, which
is much narrower than those reported previously. Fourier transform infrared spectroscopy suggests
that the surface oxide produced during photoetching plays an important role in the UV emission of
the KF-prepared PSi. |
| URI: | http://hdl.handle.net/10087/2945 |
| ISSN: | 0003-6951 |
| Appears in Collections: | 学術雑誌論文
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