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Please use this identifier to cite or link to this item: http://hdl.handle.net/10087/2947

Title: Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4
Authors: Ozaki, Shunji
Muto, Kei-Ichi
Nagata, Hisatoshi
Adachi, Sadao
Issue Date: 15-Feb-2005
Publisher: American Institute of Physics
Citation: Journal of Applied Physics. 97, 043507 (2005)
Abstract: Optical-absorption and photoluminescence (PL) spectra have been measured on the defect-chalcopyrite-type semiconductor CdGa2Te4 in the 0.9–1.5-eV photon-energy range at temperatures between 11 and 300 K. The temperature dependence of the direct-gap energy of CdGa2Te4 has been determined from the optical-absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band peaking at ,1.326 eV and a symmetric emission band at ~1.175 eV at T=11 K, which are attributed to donor-acceptor-pair recombination between exponentially tailed or Gaussian-like donor states and acceptor levels, respectively. A multiple-exponential fit analysis of the PL emission suggests acceptor levels of 50 and 86 meV and a deep donor level of 190 meV, together with an unidentified shallow level of 9 meV. An energy-band scheme has been proposed for the explanation of PL emission observed in CdGa2Te4.
URI: http://hdl.handle.net/10087/2947
ISSN: 0021-8979
Appears in Collections:学術雑誌論文

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