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Please use this identifier to cite or link to this item: http://hdl.handle.net/10087/2949

Title: Properties of radio-frequency-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas
Authors: Miyazaki, Takayuki
Takada, Kouhei
Adachi, Sadao
Ohtsuka, Kohji
Issue Date: 1-May-2005
Publisher: American Institute of Physics
Citation: Journal of Applied Physics. 97, 093516 (2005)
Abstract: GaN films have been deposited by reactive sputtering in nitrogen gas at pressures from 0.08 to 2.70 Pa with and without the addition of hydrogen gas. X-ray diffraction (XRD), Fourier transform infrared (FTIR), optical absorption, and photoluminescence (PL) spectroscopy have been used to characterize the sputter-deposited GaN films. The XRD pattern reveals that the GaN films deposited in nitrogen gas at pressures lower than 0.53 Pa are polycrystals with the (0001) texture (α-GaN), while those deposited at or above 1.07 Pa display mixed crystalline orientations or an amorphous-like nature. The GaN:H films deposited in nitrogen/hydrogen mixed gas, on the other hand, show an amorphous or amorphous-like nature. The FTIR spectra indicate that the GaN:H films show peaks arising from hydrogen-related bonds at ~1000 and ~3200 cm−1, in addition to the GaN absorption band at ,555 cm−1. The optical absorption spectra at 300 K indicate the fundamental absorption edges at ~3.38 and ~3.7 eV for the highly oriented α-GaN and amorphous GaN:H films, respectively. PL emission has been observed from sputter-deposited a-GaN films at temperatures below 100 K. The GaN:H films also show strong band-edge and donor-acceptor pair emissions. The PL emission in the GaN:H film may arise from crystalline GaN particles embedded in the amorphous GaN matrix.
URI: http://hdl.handle.net/10087/2949
ISSN: 0021-8979
Appears in Collections:学術雑誌論文

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